Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thickSpecifications: Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant: Intrinsic type, undoped Silicon Thickness: 0. 5 um + 10% Resistivity: > 100 ohm. cm Micro particle density ( for particles > 2 um) < 2 cm^2 Sapphire Wafer: R plane (1 102) with single flat Wafer size: 10x10 x 0. 46 mm thickness Front surface: Epi polished (Ra < = 4 nm) Back surface: Optical grade polish TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um MPN: